High-Performance Inverted Red InP Quantum Dot Light-Emitting Diodes with a New Electron Transport Layer

Jang Hyuk Kwon

doi:https://doi.org/10.36463/idw.2022.0913

15:10 〜 15:30

[MEET6-2 (Invited)] High-Performance Inverted Red InP Quantum Dot Light-Emitting Diodes with a New Electron Transport Layer

*Jang Hyuk Kwon¹、Nagarjuna Naik Mude¹ (1.Kyung Hee University (Korea))

Quantum dots, charge balance, high efficiency

https://doi.org/10.36463/idw.2022.0913

Here we report high-performance inverted red InP QLEDs using a new KHU-ETL as an interlayer. Our optimized device with QD:DBTA(1wt%) showed a maximum EQE of 11.6% and a lifetime (LT₅₀) of 3800 hrs at 1000 cd/m². This enhancement is due to improved charge balance and also suppressed interfacial exciton quenching.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[MEET6-2 (Invited)] High-Performance Inverted Red InP Quantum Dot Light-Emitting Diodes with a New Electron Transport Layer