Homogeneously Integrated GaN Based Micro-LED Arrays with GaN Transistors

Yaying Liu

doi:https://doi.org/10.36463/idw.2022.0949

11:10 〜 11:30

[MEET9-2 (Invited)] Homogeneously Integrated GaN Based Micro-LED Arrays with GaN Transistors

Yaying Liu^1,2、*Zhaojun Liu¹、Kei May Lau² (1.Southern University of Science and Technology (China)、2.Hong Kong University of Science and Technology (Hong Kong))

Micro-LED, GaN, Displays

https://doi.org/10.36463/idw.2022.0949

This paper will report the recent progress of GaN-based Micro-LED arrays homogeneously integrated with GaN high electron mobility transistors (HEMTs). The homogeneous integration method offers a feasible way to reduce parasitic effects and to improve the performance of the Micro-LED displays.

Proceedings of the International Display Workshops Volume 29 (IDW '22)

[MEET9-2 (Invited)] Homogeneously Integrated GaN Based Micro-LED Arrays with GaN Transistors