Low-cost organolead halide perovskite materials, with their outstanding optoelectronic properties, provide new opportunities for developing highly sensitive photodetectors for various sensing scenarios. Heterogenous integration of oxide TFT with an organolead halide perovskite photoabsorbing layer is an attractive approach for developing low-noise high-sensitivity photodetectors. Here, the development of perovskite/IGZO heterojunction phototransistor is reviewed. The fabrication process of heterojunction phototransistor is compatible with conventional TFT manufacturing ...