Spinel Single Phase Indium Zinc Tin Oxide Thin-Film Transistors with High Mobility and Excellent Uniformity

Gwang Bok Kim

doi:https://doi.org/10.36463/idw.2023.0165

17:00 〜 17:20

[AMD2-2] Spinel Single Phase Indium Zinc Tin Oxide Thin-Film Transistors with High Mobility and Excellent Uniformity

*Gwang Bok Kim¹, Jae Kyeong Jeong¹ (1. Hanyang University (Korea))

Indium-Zinc-Tin-Oxide (IZTO), TFT, Spinel, High mobility

https://doi.org/10.36463/idw.2023.0165

In this paper, we demonstrate successful growth of single spinel phase In_0.22Zn_0.55Sn_0.23O_1.34 films at 300 °C using meticulous cation composition design and catalytic chemical reaction. The devices exhibit an exceptional field-effect mobility of 83.2 cm²/Vs, along with outstanding reliability under external gate bias stress and excellent uniformity.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[AMD2-2] Spinel Single Phase Indium Zinc Tin Oxide Thin-Film Transistors with High Mobility and Excellent Uniformity