International Display Workshops General Incorporated Association

17:20 〜 17:40

[AMD2-3] Ultrafast Magnesium Reaction-Induced Source/Drain for Short-Channel Top-Gate Self-Aligned Oxide Thin-Film Transistors

*Jiye Li1, Yuqing Zhang2, Yuhan Zhang1, Dongxiang Luo3, Huan Yang1, Xinwei Wang1, Lei Lu1, Shendong Zhang1 (1. Peking University (China), 2. Hong Kong University of Science and Technology (Hong Kong), 3. Guangzhou University (China))

Amorphous InGaZnO, self-aligned top-gate, magnesium (Mg), thin-film transistor (TFT), short-channel

https://doi.org/10.36463/idw.2023.0169

Ultrafast magnesium (Mg) reaction-induced highly conductive amorphous indium-gallium-zinc-oxide (a-IGZO) source/drain(S/D) regions with a resistivity of 5.7 × 10-3 Ω·cm was achieved through 10-s rapid thermal annealing (RTA). This method demonstrated good electrical performance in self-aligned top-gate (SATG) thin-film transistors (TFTs), realizing the enhanced-mode TFTs with a sub-micron channel length.