Ultrafast Magnesium Reaction-Induced Source/Drain for Short-Channel Top-Gate Self-Aligned Oxide Thin-Film Transistors

Jiye Li

doi:https://doi.org/10.36463/idw.2023.0169

5:20 PM - 5:40 PM

[AMD2-3] Ultrafast Magnesium Reaction-Induced Source/Drain for Short-Channel Top-Gate Self-Aligned Oxide Thin-Film Transistors

*Jiye Li¹, Yuqing Zhang², Yuhan Zhang¹, Dongxiang Luo³, Huan Yang¹, Xinwei Wang¹, Lei Lu¹, Shendong Zhang¹ (1. Peking University (China), 2. Hong Kong University of Science and Technology (Hong Kong), 3. Guangzhou University (China))

Amorphous InGaZnO, self-aligned top-gate, magnesium (Mg), thin-film transistor (TFT), short-channel

https://doi.org/10.36463/idw.2023.0169

Ultrafast magnesium (Mg) reaction-induced highly conductive amorphous indium-gallium-zinc-oxide (a-IGZO) source/drain(S/D) regions with a resistivity of 5.7 × 10^-3 Ω·cm was achieved through 10-s rapid thermal annealing (RTA). This method demonstrated good electrical performance in self-aligned top-gate (SATG) thin-film transistors (TFTs), realizing the enhanced-mode TFTs with a sub-micron channel length.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[AMD2-3] Ultrafast Magnesium Reaction-Induced Source/Drain for Short-Channel Top-Gate Self-Aligned Oxide Thin-Film Transistors