International Display Workshops General Incorporated Association

5:40 PM - 6:00 PM

[AMD2-4L (Invited)] Stability Issues in Oxide TFTs for Future Displays

*Junghwan Kim1,2, Soohyun Kim1, Xuejian Zhang1, Minju Song1, Hideo Hosono2 (1. Ulsan National Institute of Science and Technology (Korea), 2. Tokyo Institute of Technology (Japan))

Oxide Semiconductors, Bias Stress Instability, Stability Issues in High-mobility Oxide TFTs

https://doi.org/10.36463/idw.2023.0173

In this work, we show a reason why high-mobility oxide TFTs tends to exhibit poor reliability such as NBTS and PBTS. It is revealed that the NBTS mechanism is mainly attributed to the Fermi level shift of active layer itself and it is highly dependent on the conduction band minimum location. Moreover, we show that the oxide semiconductors with higher mobility possess deeper CBM levels ...