17:40 〜 18:00
[AMD2-4L (Invited)] Stability Issues in Oxide TFTs for Future Displays
Oxide Semiconductors, Bias Stress Instability, Stability Issues in High-mobility Oxide TFTs
In this work, we show a reason why high-mobility oxide TFTs tends to exhibit poor reliability such as NBTS and PBTS. It is revealed that the NBTS mechanism is mainly attributed to the Fermi level shift of active layer itself and it is highly dependent on the conduction band minimum location. Moreover, we show that the oxide semiconductors with higher mobility possess deeper CBM levels ...