Micro-LED Display Derived by High Mobility Metal Oxide Thin Film Transistor Doped with Praseodymium

Lei Wang

doi:https://doi.org/10.36463/idw.2023.0201

5:10 PM - 5:30 PM

[AMD5-1 (Invited)] Micro-LED Display Derived by High Mobility Metal Oxide Thin Film Transistor Doped with Praseodymium

*Lei Wang^1,2, Hua Xu², Miao Xu^1,2, Min Li², Junbiao Peng¹ (1. South China University of Technology (China), 2. Guangzhou New Vision Opto-Electronic Technology Co., Ltd (China))

Thin Film Transistor, Oxide Semiconductor, High Mobility, Micro-LED

https://doi.org/10.36463/idw.2023.0201

Praseodymium-doped indium zinc oxide (Pr:IZO) have been employed as the active layer of thin film transistors (TFTs). The Pr:IZO TFTs showed a high field effect mobility of 46.5 cm²/Vs and SS value of 0.23 V/decade. A prototype of micro-LED display was successfully fabricated based on the Pr-doping TFTs.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[AMD5-1 (Invited)] Micro-LED Display Derived by High Mobility Metal Oxide Thin Film Transistor Doped with Praseodymium