High Performance Thin Film Transistor Fabricated Using Solution-Processed Zinc-Tin-Oxide Channel Layer

Wun-Ciang Jhang

doi:https://doi.org/10.36463/idw.2023.0204

17:30 〜 17:50

[AMD5-2] High Performance Thin Film Transistor Fabricated Using Solution-Processed Zinc-Tin-Oxide Channel Layer

*Wun-Ciang Jhang¹, Hsueh-Chih Chang¹, Chih-Chieh Hsu¹ (1. National Yunlin University of Science and Technology (Taiwan))

Oxide semiconductor, solution process, thin film transistor

https://doi.org/10.36463/idw.2023.0204

In this study, a solution-processed zinc-tin-oxide (ZTO) thin film is used as a channel layer of a thin-film transistor (TFT). The fabricated ZTO TFT demonstrates remarkable electrical properties such as a high I_ON/I_OFFratio of 2.73 × 10⁷ and high mobility (μ) of 5.58 cm²V^-1s^-1.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[AMD5-2] High Performance Thin Film Transistor Fabricated Using Solution-Processed Zinc-Tin-Oxide Channel Layer