6:10 PM - 6:30 PM
[AMD5-4L] Two Types of Correlation between Donor-level and Concentration in a-IGZO
amorphous oxide semiconductor, native defect, photoemission spectroscopy
We propose the presence of oxygen-related acceptors in amorphous oxide semiconductors (AOS) based on a new finding of two types of correlation, positive and negative, between carrier concentration and activation energy, and HAXPES experiments. This finding was explained in terms of donor-donor and donor-acceptor interaction, leading to operation of TFTs.