International Display Workshops General Incorporated Association

18:10 〜 18:30

[AMD5-4L] Two Types of Correlation between Donor-level and Concentration in a-IGZO

*Hanjun Cho1, Masatake Tsuji1, Junghwan Kim1,2, Hideo Hosono1,3 (1. Tokyo Institute of Technology (Japan), 2. Ulsan National Institute of Science and Technology (Korea), 3. National Institute for Materials Science (Japan))

amorphous oxide semiconductor, native defect, photoemission spectroscopy

https://doi.org/10.36463/idw.2023.0211

We propose the presence of oxygen-related acceptors in amorphous oxide semiconductors (AOS) based on a new finding of two types of correlation, positive and negative, between carrier concentration and activation energy, and HAXPES experiments. This finding was explained in terms of donor-donor and donor-acceptor interaction, leading to operation of TFTs.