International Display Workshops General Incorporated Association

09:00 〜 09:20

[AMD6-1 (Invited)] High Mobility Oxide TFT Using Poly-Crystalline Oxide Semiconductor on Gen.6 Glass Substrate

*Masashi Tsubuku1, Hajime Watakabe1, Toshinari Sasaki1, Takaya Tamaru1, Marina Mochizuki1, Hiroyuki Kimura1, Emi Kawashima2, Daichi Sasaki2, Yuki Tsuruma1 (1. Japan Display Inc. (Japan), 2. Idemitsu Kosan Co. Ltd. (Japan))

Oxide TFT, High Mobility, Poly-Crystalline

https://doi.org/10.36463/idw.2023.0215

We have successfully developed stable poly-crystalline oxide semiconductor (Poly-OS) as channels of TFT on Gen.6 glass substrates. This technology has significantly improved mobility and stability at the same time, achieving both extremely low off-state current similar to conventional oxide TFTs and high on-state current equivalent to LTPS TFTs.