International Display Workshops General Incorporated Association

09:20 〜 09:40

[AMD6-2 (Invited)] 513-ppi OLED Display Using Vertical Oxide Semiconductor Transistor

Motoharu Saito1, Hideaki Shishido1, Susumu Kawashima1, Shingo Eguchi1, Chieko Misawa1, Hidenori Mori1, Emi Koezuka1, Masataka Nakada1, Yukinori Shima1, Koji Kusunoki1, Kenichi Okazaki1, Junichi Koezuka1, Norihiko Seo1, Shunpei Yamazaki1, *Susumu Kawashima1 (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

CAAC-IGZO, OLED, High resolution, Vertical structure, RGB stripe

https://doi.org/10.36463/idw.2023.0219

We developed a vertical oxide semiconductor transistor (VFET) having a small footprint and a high on-state current, and fabricated a 513-ppi OLED display with an RGB stripe arrangement and an internal compensation pixel circuit. VFET is fabricated through a simpler process than LTPO FET and enables low-power and high-resolution displays.