International Display Workshops General Incorporated Association

09:40 〜 10:00

[AMD6-3] Enhanced Electrical Performance and Bias Stability of Oxide Thin-Film Transistors via Bilayer Channel Engineering

*Boyeon Park1, Donghyun Kang1, Yoon-Hoon Kim1 (1. Sungkyunkwan University (Korea))

Bilayer channel structure, Co-sputtering, Passivation effect, Band bending, Energy band engineering

https://doi.org/10.36463/idw.2023.0223

Here, we propose ZTO/Ti:ZTO heterojunction thin-film transistors (TFTs) to enhance both the electrical performance and bias stability of the device. To investigate the correlation of bilayer channel structure and device performance, various spectroscopic analyses were carried out including ultraviolet photoelectron spectroscopy.