Enhanced Electrical Performance and Bias Stability of Oxide Thin-Film Transistors via Bilayer Channel Engineering

Boyeon Park

doi:https://doi.org/10.36463/idw.2023.0223

9:40 AM - 10:00 AM

[AMD6-3] Enhanced Electrical Performance and Bias Stability of Oxide Thin-Film Transistors via Bilayer Channel Engineering

*Boyeon Park¹, Donghyun Kang¹, Yoon-Hoon Kim¹ (1. Sungkyunkwan University (Korea))

Bilayer channel structure, Co-sputtering, Passivation effect, Band bending, Energy band engineering

https://doi.org/10.36463/idw.2023.0223

Here, we propose ZTO/Ti:ZTO heterojunction thin-film transistors (TFTs) to enhance both the electrical performance and bias stability of the device. To investigate the correlation of bilayer channel structure and device performance, various spectroscopic analyses were carried out including ultraviolet photoelectron spectroscopy.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[AMD6-3] Enhanced Electrical Performance and Bias Stability of Oxide Thin-Film Transistors via Bilayer Channel Engineering