10:00 AM - 10:20 AM
[AMD6-4L] Improved Reliability of Plasma-Enhanced ALD-derived HfO2/IGZO Thin-Film Transistors
plasma-enhanced atomic layer deposition , amorphous indium gallium zinc oxide, high-k, thin-film transistor
Mechanism of reliability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) was investigated from the perspective of positive points defects in the HfO2 gate dielectric. Reducing positive point defects in HfO2 can improve the abnormal threshold voltage (VTH) shift of TFTs under positive gate bias temperature stress (PBTS).