International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 30 (IDW '23)

Proceedings of the International Display Workshops Volume 30 (IDW '23)

2023年12月6日 〜 2023年12月8日
TOKI MESSE Niigata Convention Center

10:00 〜 10:20

[AMD6-4L] Improved Reliability of Plasma-Enhanced ALD-derived HfO2/IGZO Thin-Film Transistors

*Cheol Hee Choi1, Jae Kyeong Jeong1 (1. Hanyang University (Korea))

plasma-enhanced atomic layer deposition , amorphous indium gallium zinc oxide, high-k, thin-film transistor

https://doi.org/10.36463/idw.2023.0227

Mechanism of reliability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) was investigated from the perspective of positive points defects in the HfO2 gate dielectric. Reducing positive point defects in HfO2 can improve the abnormal threshold voltage (VTH) shift of TFTs under positive gate bias temperature stress (PBTS).