High Current Stress Analysis for p-type LTPS Thin Film Transistor with Split Active Layer for High Current Driving AMOLED Display

Sabiqun Nahar Godhuly

doi:https://doi.org/10.36463/idw.2023.0274

[AMDp2-1] High Current Stress Analysis for p-type LTPS Thin Film Transistor with Split Active Layer for High Current Driving AMOLED Display

*Sabiqun Nahar Godhuly¹, Sunaina Priyadarshi¹, Abidur Rahaman¹, Heonbang Lee¹, MD Redowan Mahmud Arnob¹, Jin Jang¹ (1. Kyung Hee University (Korea))

High Current Stress (HCS), LTPS TFTs, active split, Excimer Laser Annealing (ELA)

https://doi.org/10.36463/idw.2023.0274

We have investigated the electrical performance of high current stress (HCS) generated heating effects in low-temperature polysilicon (LTPS) TFT, fabricated on a glass substrate, and compared the performance in conventional and active split ELA LTPS TFTs. The active split LTPS TFT showed stable performance compared with the conventional LTPS TFT.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[AMDp2-1] High Current Stress Analysis for p-type LTPS Thin Film Transistor with Split Active Layer for High Current Driving AMOLED Display