CMOS Based on Self-Aligned Cu-MIC Double-Gate Poly-Ge TFT on Glass Substrates

Sho Suzuki

doi:https://doi.org/10.36463/idw.2023.0301

[AMDp2-9L] CMOS Based on Self-Aligned Cu-MIC Double-Gate Poly-Ge TFT on Glass Substrates

*Sho Suzuki¹, Akito Hara¹ (1. Tohoku Gakuin University (Japan))

CMOS, Poly-Ge, Cu-MIC, TFT

https://doi.org/10.36463/idw.2023.0301

SoG requires CMOS circuits on glass substrates. Ge has higher mobility and lower melting point than Si. In this study, n- and p-channel self-aligned double-gate poly-Ge TFTs are fabricated on glass substrates through Cu-MIC at 500 °C, and a CMOS inverter is fabricated by connecting these TFTs using wires.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[AMDp2-9L] CMOS Based on Self-Aligned Cu-MIC Double-Gate Poly-Ge TFT on Glass Substrates