International Display Workshops General Incorporated Association

4:40 PM - 5:00 PM

[FLX1-1 (Invited)] Atmospheric Pressure Spatial Atomic Layer Deposition for Flexible Oxide Semiconductor Thin Film Transistors

Kwang Su Yoo1, Chi-Hoon Lee1, Dong-Gyu Kim1, Won-Bum Lee1, *Jin-Seong Park1 (1. Hanyang University (Korea))

Atomic Layer Deposition, Oxide Semiconductor, Flexible TFT, Spatial ALD

https://doi.org/10.36463/idw.2023.1097

This talk will introduce the atmospheric pressure spatial atomic layer deposition with high throughput/yield for In2O3 and InZnO Thin Film Transistors. The device shows excellent performance characteristics, including a field-effect mobility of 69.79 cm2/V·s, a threshold voltage of -0.06 ± 0.22 V, and a subthreshold swing of 0.16 V/decade.