Atmospheric Pressure Spatial Atomic Layer Deposition for Flexible Oxide Semiconductor Thin Film Transistors

Kwang Su Yoo

doi:https://doi.org/10.36463/idw.2023.1097

4:40 PM - 5:00 PM

[FLX1-1 (Invited)] Atmospheric Pressure Spatial Atomic Layer Deposition for Flexible Oxide Semiconductor Thin Film Transistors

Kwang Su Yoo¹, Chi-Hoon Lee¹, Dong-Gyu Kim¹, Won-Bum Lee¹, *Jin-Seong Park¹ (1. Hanyang University (Korea))

Atomic Layer Deposition, Oxide Semiconductor, Flexible TFT, Spatial ALD

https://doi.org/10.36463/idw.2023.1097

This talk will introduce the atmospheric pressure spatial atomic layer deposition with high throughput/yield for In2O3 and InZnO Thin Film Transistors. The device shows excellent performance characteristics, including a field-effect mobility of 69.79 cm²/V·s, a threshold voltage of -0.06 ± 0.22 V, and a subthreshold swing of 0.16 V/decade.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[FLX1-1 (Invited)] Atmospheric Pressure Spatial Atomic Layer Deposition for Flexible Oxide Semiconductor Thin Film Transistors