International Display Workshops General Incorporated Association

5:20 PM - 5:40 PM

[FLX1-3] High-Performance Solution Process Amorphous In0.5Ga0.5O Coplanar Thin Film Transistor for Flexible Display Backplanes

*Md. Hasnat Rabbi1, Arqum Ali1, Chanju Park1, Jinbaek Bae1, Jin Jang1 (1. Kyung Hee University (Korea))

Polyimide Substrate, Amorphous InGaO, High-Mobility, Thin-film Transistor

https://doi.org/10.36463/idw.2023.1105

High-quality amorphous In0.5Ga0.5O thin films are deposited using spray pyrolysis on a polyimide substrate at ∼330°C. By achieving a thickness of 30 nm, mobility over 36 cm2V-1s-1 is obtained. A ring oscillator with an oscillation frequency of 2.32 MHz further demonstrates the potential for flexible display backplanes.