17:20 〜 17:40
[FLX1-3] High-Performance Solution Process Amorphous In0.5Ga0.5O Coplanar Thin Film Transistor for Flexible Display Backplanes
Polyimide Substrate, Amorphous InGaO, High-Mobility, Thin-film Transistor
High-quality amorphous In0.5Ga0.5O thin films are deposited using spray pyrolysis on a polyimide substrate at ∼330°C. By achieving a thickness of 30 nm, mobility over 36 cm2V-1s-1 is obtained. A ring oscillator with an oscillation frequency of 2.32 MHz further demonstrates the potential for flexible display backplanes.