11:30 AM - 11:50 AM
[FMC5-3] Highly Conductive Metal Film Dry Etching via ECR Plasma Source
Cu(Copper), ITO(Indium Tin Oxide), Ag(Silver), Dry Etch, ECR Plasma
This paper presents PR masked thin Cu, ITO/Ag/ITO film dry etching performance that is etched by high electron temperature plasma source with low temperature substrate. Dry etching is performed using HCl gas, scanning low temperature susceptor and the electron cyclotron resonance (ECR) plasma produced by rectangular-type microwave slot antenna (ReSLAN) are used.