[FMCp1-1] Zinc Tin Oxide based Synaptic Transistors with Ion-Gel Gate Insulator for Neuromorphic Computing Application
artificial synapses, Synaptic transistor, Ion-gel, Neuromorphic device
Synaptic transistors based on Zinc-Tin-Oxide semiconductor with Ion-gel (PMMA+[EMIM][TFSI]) film as gate insulators and hexamethyldisilazane as barrier layer was investigated. The short-term plasticity characteristics are proved with strong correlation with drain voltage, pulse width, and interval time. The long-term potentiation characteristics was measured by fifty continuous gate pluses with constant drain voltage. The results reveal a possible solution to fabricate a realistic artificial ...