Fine patterning plays an important role in high-resolution mobile, VR and AR backplanes. For overcoming equipment limit, over-exposure method and i-line photoresist were applied. 1.0-µm metal layer with CV 15% for line/space and 1.0-µm inorganic layer with CV 14% for hole patterns were formed. We applied inclined 2-step slope to prevent un-filling holes. 4.3 inch panels with 2200 ppi and 1.0 µm patterning were demonsrtrated.