[FMCp2-2] Improvement of the Bias Instability Characteristics Driven by Organic Film in IGZO TFT for OLED Back Plane
Organic Light-Emitting Diode (OLED), Indium-Gallium-Zinc-Oxide thin-film transistor, Spin on glass (SOG), Bias temperature stress (BTS), Plasma treatment
Undesirable effects with signal interference between electrodes and TFTs could not be ignored in high-performance and various-function displays. Barrier layers are needed to prevent the interference from the touch-signal-layer electrodes in bottom-emission OLED backplanes. To improve abnormal behaviors of TFTs with SOG barrier layers under bias-temperature stresses, plasma treatment on SOG surface was conducted. We suggested one mechanism based on 4-probe transfer characteristics and XPS.