International Display Workshops General Incorporated Association

[FMCp2-4] Effect of Fluorine Plasma Treatment on IGZO TFT Stability According to the Channel Oxygen Vacancy Concentration

*Jinsung Mok1,2, Jin-Kyu Lee1,2, Yuseong Jang1,2, Ji-Ho Lee1,2, Soo-Yeon Lee1,2 (1. Seoul National University (Korea), 2. Inter-University Semiconductor Research Center (Korea))

IGZO TFT, Oxygen vacancy, Sputtering power, Fluorine plasma treatment, Bias stress stability

https://doi.org/10.36463/idw.2023.0429

We fabricated fluorine plasma-treated IGZO TFTs with various oxygen vacancy concentrations by adjusting the sputtering power during IGZO deposition. The dominant role of fluorine introduced by plasma treatment varied according to the channel's condition. The fluorine treatment effect on the TFT reliability was also examined.