[FMCp2-4] Effect of Fluorine Plasma Treatment on IGZO TFT Stability According to the Channel Oxygen Vacancy Concentration
IGZO TFT, Oxygen vacancy, Sputtering power, Fluorine plasma treatment, Bias stress stability
We fabricated fluorine plasma-treated IGZO TFTs with various oxygen vacancy concentrations by adjusting the sputtering power during IGZO deposition. The dominant role of fluorine introduced by plasma treatment varied according to the channel's condition. The fluorine treatment effect on the TFT reliability was also examined.