[FMCp2-8] Four Mask Micro-Crystalline Silicon TFT Integrated GOA Circuit on G8.6 Large Size UHD TVs
Amorphous silicon, Gate Insulator, Thin Film Transistor, Black Mura, High Intensity Illumination
We fabricated high-stability µc-Si thin films on G8.6 glass substrate and investigated effects of hydrogen/silane gas ratio, power, and pressure in PECVD. Electrical characteristics and crystallinity of BCE TFTs using halftone four-mask photolithography are studied. Key factors affecting the deposition rate for high-mobility TFTs are hydrogen/silane gas ratio and plasma power with a suitable μc-Si thickness. The crystallinity and reliability are better than ...