Non-Volatile Memory Thin-Film Transistors Using Oxide Semiconductor as Both Active and Charge Trapping Layer

Nara Lee

doi:https://doi.org/10.36463/idw.2023.0452

[FMCp2-11] Non-Volatile Memory Thin-Film Transistors Using Oxide Semiconductor as Both Active and Charge Trapping Layer

*Nara Lee^1,2, Soryeong Jeong³, Jiwan Kim², Min Suk Oh¹ (1. Korea Electronics Technology Institute (KETI) (Korea), 2. Kyonggi University (Korea), 3. Yonsei University (Korea))

Non-Volatile Memory TFTs, Charge Trapping Layer, Oxide Semiconductor

https://doi.org/10.36463/idw.2023.0452

In this study, a non-volatile memory thin film transistor using oxide semiconductor as a channel and charge trapping layer material was fabricated, and the manufacturing method of the memory thin film transistor according to the deposition conditions of the oxide semiconductor charge trapping layer was optimized.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[FMCp2-11] Non-Volatile Memory Thin-Film Transistors Using Oxide Semiconductor as Both Active and Charge Trapping Layer