‘Nano-in-Nano’: Combining Bottom-Up Fabrication Techniques to Create Nanoscale Electronic Devices Using Nanomaterials

Umer F Ahmed

doi:https://doi.org/10.36463/idw.2023.0897

1:00 PM - 1:20 PM

[MEET1-1 (Invited)] ‘Nano-in-Nano’: Combining Bottom-Up Fabrication Techniques to Create Nanoscale Electronic Devices Using Nanomaterials

Umer F Ahmed¹, *Gwenhivir S Wyatt-Moon¹, Andrew John Flewitt¹ (1. University of Cambridge (UK))

zinc oxide, adhesion lithography, bottom-up fabrication, nanoelectronics, Schottky Barrier Diode

https://doi.org/10.36463/idw.2023.0897

There has long been a desire to use the properties of nanomaterials in electronic devices. The lateral growth of ZnO nanowires is demonstrated between coplanar metal electrodes that have also been fabricated using a bottom up adhesion lithography process such that the gap between the electrodes is ∼10 nm.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[MEET1-1 (Invited)] ‘Nano-in-Nano’: Combining Bottom-Up Fabrication Techniques to Create Nanoscale Electronic Devices Using Nanomaterials