International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 30 (IDW '23)

Proceedings of the International Display Workshops Volume 30 (IDW '23)

2023年12月6日 〜 2023年12月8日
TOKI MESSE Niigata Convention Center

[MEETp1-4] Enhancing the Stability and Performance of Coplanar InGaSnO Thin-Film Transistors by N2O Annealing

*Byeonggwan Kim1, Md. Hasnat Rabbi1, Myeonggi Jeong1, Jin Jang1 (1. Kyung Hee University (Korea))

InGaSnO(IGTO), Thin-film transistor(TFT), N2O annealing, self-aligned coplanar

https://doi.org/10.36463/idw.2023.1028

We report a method to improve the performance of coplanar amorphous InGaSnO thin-film transistors by N2O post annealing at 380 oC. This annealing leads to improved electrical properties and stability. N2O post annealing leads to hysteresis free transfer curve and stable TFT characteristics with enhanced field-effect mobility from 8.13 to 37.60 cm2/Vs.