[MEETp1-5] 2 µm Channel Length InGaSnO Thin-Film Transistor Using Spray Pyrolysis Process
indium-gallium-tin-oxide (IGTO),, Thin-film transistor (TFT), Spray Pyrolysis
We fabricated indium-gallium-tin-oxide (IGTO) thin-film transistors (TFTs) using spray pyrolysis on glass substrates. The IGTO TFT exhibited a high field-effect mobility of 25.9 cm2/Vs and showed good stability with a Vth shift of 0.4V under 1-hour PBTS conditions. Solution-processed IGTO TFTs are promising and have the potential to replace current TFTs in the near future.