International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 30 (IDW '23)

Proceedings of the International Display Workshops Volume 30 (IDW '23)

2023年12月6日 〜 2023年12月8日
TOKI MESSE Niigata Convention Center

[MEETp1-5] 2 µm Channel Length InGaSnO Thin-Film Transistor Using Spray Pyrolysis Process

*Myeonggi Jeong1, Heonbang Lee1, Byeonggwan Kim1, Jin Jang1 (1. Kyung Hee University (Korea))

indium-gallium-tin-oxide (IGTO),, Thin-film transistor (TFT), Spray Pyrolysis

https://doi.org/10.36463/idw.2023.1031

We fabricated indium-gallium-tin-oxide (IGTO) thin-film transistors (TFTs) using spray pyrolysis on glass substrates. The IGTO TFT exhibited a high field-effect mobility of 25.9 cm2/Vs and showed good stability with a Vth shift of 0.4V under 1-hour PBTS conditions. Solution-processed IGTO TFTs are promising and have the potential to replace current TFTs in the near future.