10:50 〜 11:10
[OLED6/PH4-1 (Invited)] Interfacial Engineering Toward Improved Characteristics of Printed Light-Emitting Diodes Based on Green Emissive InP/ZnSe/ZnS Quantum Dots
quantum dots, light-emitting devices, InP, green emission
A controlled green electroluminescent (EL) spectrum was obtained owing to improved emission recombination into InP/ZnSe/ZnS quantum dot (QD) modified both the ligands and ZnSe intermediate shell. Green emissive InP/ZnSe/ZnS QD light-emitting diode using self-assembly monolayer-treated NiOx hole-injection layer exhibits a narrower EL spectrum and almost the same EL intensity at low current density, compared to yellow-green emissive polymer ...