International Display Workshops General Incorporated Association

10:50 〜 11:10

[OLED6/PH4-1 (Invited)] Interfacial Engineering Toward Improved Characteristics of Printed Light-Emitting Diodes Based on Green Emissive InP/ZnSe/ZnS Quantum Dots

*Hirotake Kajii1, Maowei Huang1, Shinsei Yamada1, Akihito Okamoto1, Yugo Ashida1, Shintaro Toda2, Mizuki Kuniyoshi2, Masahiko Kondow1 (1. Osaka University (Japan), 2. ULVAC, Inc. (Japan))

quantum dots, light-emitting devices, InP, green emission

https://doi.org/10.36463/idw.2023.0592

A controlled green electroluminescent (EL) spectrum was obtained owing to improved emission recombination into InP/ZnSe/ZnS quantum dot (QD) modified both the ligands and ZnSe intermediate shell. Green emissive InP/ZnSe/ZnS QD light-emitting diode using self-assembly monolayer-treated NiOx hole-injection layer exhibits a narrower EL spectrum and almost the same EL intensity at low current density, compared to yellow-green emissive polymer ...