[OLEDp1-4] Aging and Recovery Effects of Quantum-Dot Light-Emitting Diode Characteristics
Quanum-dot light-emitting diodes, aging, recovery, reverse bias
This paper aims to explore the aging and recovery mechanisms of quantum dot light emitting diode (QLED) properties. We investigated the effects of reverse bias on charge trapping and accumulation mitigation of QLEDs, the effects of N2 environmental storage, and annealing in the ZnO nanoparticle (NP) electron transport layer (ETL).