Development of Room Temperature Continuous-Wave Deep Ultraviolet Laser Diodes

Maki Kushimoto

doi:https://doi.org/10.36463/idw.2023.0516

5:10 PM - 5:50 PM

[PH2-1 (Invited)] Development of Room Temperature Continuous-Wave Deep Ultraviolet Laser Diodes

*Maki Kushimoto¹, Ziyi Zhang^1,2, Akira Yoshikawa^1,2, Koji Aoto¹, Yoshio Honda¹, Leo J Schowalter¹, Chiaki Sasaoka¹, Hiroshi Amano¹ (1. Nagoya University (Japan), 2. Asahi Kasei Corporation (Japan))

Laser, UV, LD, AlGaN, Semiconductor

https://doi.org/10.36463/idw.2023.0516

AlGaN-based UV-C laser diodes (LD) are expected to be applied to various applications as a low-cost, environmentally friendly, and highly efficient laser light source. Our group has realized the world's first room-temperature continuous lasing of deep-UV LDs by optimizing crystal quality and structure, examining conductivity control methods, and suppressing process-induced dislocations.

Proceedings of the International Display Workshops Volume 30 (IDW '23)

[PH2-1 (Invited)] Development of Room Temperature Continuous-Wave Deep Ultraviolet Laser Diodes