[5-2] A New Non-Volatile Read Write Random Access Memory Operation by Means of Avalanche-Tunnel Injection in MNOS Transistor

Y. Uchida, Y. Nishi, I. Nojima, K. Tanaka, K. Tamaru (1.Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1972.5-2