[5-2] A New Non-Volatile Read Write Random Access Memory Operation by Means of Avalanche-Tunnel Injection in MNOS Transistor
Y. Uchida、Y. Nishi、I. Nojima、K. Tanaka、K. Tamaru
(1.Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
https://doi.org/10.7567/SSDM.1972.5-2