[B3-2] Impurity Concentrotion Profiles of Diffused Boron and Phosphorus in SiO2/Si and Poly Si/SiO2/Si Structures Measured by Auger Electron Spectroscopy

T. Inoue、S. Horiuchi、S. Yoshii (1.Toshiba R and D Center, Tokyo Shibaura Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1974.B3-2