[B6-2] N-channel Si-gate MOS Devices on Sapphire Substrates Hiroyuki TANGO、Jun IWAMURA、Mituo ISOBE、Keji MAEGUCHI、Minoru KIMURA (1.TOSHIBA Research and Development Center Tokyo Shibaura Electric Co., Ltd.) https://doi.org/10.7567/SSDM.1974.B6-2
