[B6-2] N-channel Si-gate MOS Devices on Sapphire Substrates

Hiroyuki TANGO, Jun IWAMURA, Mituo ISOBE, Keji MAEGUCHI, Minoru KIMURA (1.TOSHIBA Research and Development Center Tokyo Shibaura Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1974.B6-2