CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET&apos;s (IRFET&apos;s)

L. Forbes; K. W. Loh; L. L. Wittmer

doi:https://doi.org/10.7567/SSDM.1976.B-3-1

1976 International Conference on Solid State Devices

1976年9月1日〜 1976年9月3日
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-3-1] CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET's (IRFET's)

L. Forbes、K. W. Loh、L. L. Wittmer (1.Department of Electrical Engineering University of California、2.Department of Electrical Engineering University of Arkansas)

https://doi.org/10.7567/SSDM.1976.B-3-1

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