[A-2-2] A NEW MOS PROCESS USING MoSi2 AS A GATE MATERIAL

T. Mochizuki, K. Shibata, T. Inoue, K. Ohuchi (1.Toshiba Reseach and Development Center Tokyo Shibaura Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1977.A-2-2