[A-2-2] A NEW MOS PROCESS USING MoSi2 AS A GATE MATERIAL T. Mochizuki、K. Shibata、T. Inoue、K. Ohuchi (1.Toshiba Reseach and Development Center Tokyo Shibaura Electric Co., Ltd.) https://doi.org/10.7567/SSDM.1977.A-2-2
