Deep Levels Introduced by Iron Implantation in N-Type Silicon and Its Application to Switching Devices

[A-5-2] Deep Levels Introduced by Iron Implantation in N-Type Silicon and Its Application to Switching Devices

H. Hayashi, T. Mamine, T. Matsushita, O. Kumagai, K. Nishiyama, K. Kaneko (1.SONY Corporation Semiconductor Development Division and Research Center)