[A-5-2] Deep Levels Introduced by Iron Implantation in N-Type Silicon and Its Application to Switching Devices

H. Hayashi、T. Mamine、T. Matsushita、O. Kumagai、K. Nishiyama、K. Kaneko (1.SONY Corporation Semiconductor Development Division and Research Center)

https://doi.org/10.7567/SSDM.1978.A-5-2