Power GaAs MESFETs with a Graded Recess Structure

Asamitsu HIGASHISAKA; Takashi FURUTSUKA; Yoichi AONO; Yoichiro TAKAYAMA; Fumio HASEGAWA

doi:https://doi.org/10.7567/SSDM.1979.B-1-6

1979 International Conference on Solid State Devices

Aug 27, 1979 - Aug 29, 1979
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-1-6] Power GaAs MESFETs with a Graded Recess Structure

Asamitsu HIGASHISAKA, Takashi FURUTSUKA, Yoichi AONO, Yoichiro TAKAYAMA, Fumio HASEGAWA (1.Central Research Laboratories, 2.Nippon Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1979.B-1-6

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